Applications Brushed Motor drive applications BLDC Motor drive applications HEXFET Power MOSFET Battery powered circuits V 40V DSS D Half-bridge and full-bridge topologies Synchronous rectifier applications R typ. 1.4m DS(on) Resonant mode power supplies max. 1.8m OR-ing and redundant power switches G I 250A D (Silicon Limited) DC/DC and AC/DC converters DC/AC Inverters I 195A D (Package Limited) S D D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S Fully Characterized Capacitance and Avalanche D G G SOA 2 TO-262 Enhanced body diode dV/dt and dI/dt Capability D Pak IRFSL7437PbF IRFS7437PbF Lead-Free Halogen-Free GD S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFSL7437PbF TO-262 Tube 50 IRFSL7437PbF IRFS7437PbF D2Pak Tube 50 IRFS7437PbF IRFS7437PbF D2Pak Tape and Reel Left 800 IRFS7437TRLPbF 6 250 I = 100A LIMITED BY PACKAGE D 5 200 4 150 3 T = 125C J 100 2 50 T = 25C 1 J 0 0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) T , Case Temperature (C) GS C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R (on), Drain-to - m) Source On Resistance ( DS I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 250 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 180 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 195 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS Pulsed Drain Current 1000 I DM Maximum Power Dissipation 230 P T = 25C W D C Linear Derating Factor 1.5 W/C 20 Gate-to-Source Voltage V V GS 3.0 Peak Diode Recovery dv/dt V/ns -55 to + 175 Operating Junction and T J Storage Temperature Range C T STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 350 mJ AS (Thermally limited) Single Pulse Avalanche Energy E 802 AS (Thermally limited) I Avalanche Current See Fig. 14, 15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.65 R JC C/W 2 Junction-to-Ambient (PCB Mount) , D Pak R 40 JA Static T = 25C (unless otherwise specified) J Conditions Symbol Parameter Min. Typ. Max. Units V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 1.4 1.8 V = 10V, I = 100A GS D DS(on) m 2.0 V = 6.0V, I = 50A GS D V = V , I = 150A V Gate Threshold Voltage 2.2 3.0 3.9 V GS(th) DS GS D V = 40V, V = 0V I Drain-to-Source Leakage Current 1.0 A DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS R Internal Gate Resistance 2.2 G Pulse width 400 s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. Limited by T , starting T = 25C, L = 0.069mH Jmax J Limited by T starting T = 25C, L= 1mH, R = 50, I = 40A, V =10V. GS Jmax J G AS R = 50, I = 100A, V =10V. GS G AS I 100A, di/dt 1166A/s, V V , T 175C. SD DD (BR)DSS J