JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 DS V Gate-Source Voltage V 8 GS I -2.3 D Continuous Drain Current Pulsed Drain Current I -10 A DM Continuous Source-Drain Diode Current I -0.72 S Maximum Power Dissipation P 0.35 W D Thermal Resistance from Junction to Ambient(t 5s) R 357 JA /W Junction Temperature T 150 J Storage Temperature T -55 ~+150 stg B,Apr,2012 Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V Gate-source threshold voltage VGS(th) VDS =V , ID =-250A -0.4 -1 GS Gate-source leakage I VDS =0V, VGS =8V 100 nA GSS -1 Zero gate voltage drain current I VDS =-20V, VGS =0V A DSS VGS =-4.5V, ID =-2.8A 0.090 0.112 a Drain-source on-state resistance RDS(on) VGS =-2.5V, ID =-2.0A 0.110 0.142 a Forward transconductance g VDS =-5V, ID =-2.8A 6.5 S fs b Dynamic Input capacitance C 405 iss Output capacitance C VDS =-10V,VGS =0V,f =1MHz 75 pF oss Reverse transfer capacitance C 55 rss VDS =-10V,VGS =-4.5V,ID =-3A 5.5 10 Total gate charge Q g 3.3 6 nC Gate-source charge Q VDS =-10V,VGS =-2.5V,ID =-3A 0.7 gs Gate-drain charge Q 1.3 gd Gate resistance f R =1MHz 6.0 g Turn-on delay time td(on) 11 20 V =-10V, DD Rise time tr 35 60 R =10, ID =-1A, ns L Turn-off delay time td(off) 30 50 V =-4.5V,Rg=1 GEN Fall time tf 10 20 Drain-source body diode characteristics Continuous source-drain diode current I T =25 -1.3 S C A a Pulse diode forward current I -10 SM -1.2 Body diode voltage V I =-0.7A -0.8 V SD S Notes : a.Pulse Test : Pulse Width < 300s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. B,Apr,2012