NTTFS3A08PZTAG ON Semiconductor

NTTFS3A08PZ Power MOSFET 20 V, 15 A, Single P Channel, 8FL Features Ultra Low R to Minimize Conduction Losses DS(on) 8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction NTTFS3A08PZ THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toAmbient Steady State (Note 3) R 55 C/W JA JunctiontoAmbient Steady State (Note 4) R 148 JA JunctiontoAmbient (t 10 s) (Note 3) R 26 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm , 1 oz. Cu). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 6 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, 1 A DSS GS T = 25C J V = 16 V DS GatetoSource Leakage Current I V = 0 V, V = 5 V 5 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 3.3 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V I = 12 A 4.9 6.7 m DS(on) GS D V = 2.5 V I = 10 A 6.9 9.0 GS D Forward Transconductance g V = 1.5 V, I = 8 A 62 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 5000 pF iss Output Capacitance C 600 V = 0 V, f = 1.0 MHz, V = 10 V oss GS DS Reverse Transfer Capacitance C 540 rss Total Gate Charge Q 56 nC G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 4.5 V, V = 10 V, I = 8 A GS DS D GatetoSource Charge Q 6.5 GS GatetoDrain Charge Q 15.4 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 13 ns d(on) Rise Time t 60 r V = 4.5 V, V = 10 V, GS DS I = 8 A, R = 6.0 D G Turn Off Delay Time t 250 d(off) Fall Time t 170 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, 0.65 1.0 V SD GS T = 25C J I = 3 A S Reverse Recovery Time t 207 ns RR Charge Time t 45 a V = 0 V, d /d = 100 A/ s, GS IS t I = 6 A S Discharge Time t 162 b Reverse Recovery Charge Q 234 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.