MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, Drain lighter and cooler. Pin 2, Tab Features Gate Pin 1 Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Source Pin 3 Very high commutation ruggedness Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V R 125 m DS(on),max Q 56 nC g.typ I 87 A D,pulse E 400V 7.2 J oss Body diode di/dt 300 A/s Type / Ordering Code Package Marking Related Links IPW60R125P6 PG-TO 247 IPP60R125P6 PG-TO 220 6R125P6 see Appendix A IPA60R125P6 PG-TO 220 FullPAK Final Data Sheet 2 Rev. 2.0, 2014-03-07