NTTFS4929NTAG ON Semiconductor

NTTFS4929N Power MOSFET 30 V, 34 A, Single NChannel, 8FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTTFS4929N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 5.6 C/W JC JunctiontoAmbient Steady State (Note 3) R 59.2 JA JunctiontoAmbient Steady State (Note 4) R 155 JA JunctiontoAmbient (t 10 s) (Note 3) R 32.6 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm , 1 oz. Cu). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 24 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.3 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 10 A 8.8 11 m DS(on) D V = 10 V GS I = 8 A 8.8 D I = 10 A 12.7 17 D V = 4.5 V GS I = 8 A 12.7 D Forward Transconductance g V = 1.5 V, I = 15 A 26 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 920 pF iss Output Capacitance C 337 V = 0 V, f = 1.0 MHz, V = 15 V oss GS DS Reverse Transfer Capacitance C 175 rss Total Gate Charge Q 8.8 nC G(TOT) Threshold Gate Charge Q 3.1 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 2.8 GS GatetoDrain Charge Q 4.4 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 20 A 16.3 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.6 ns d(on) Rise Time t 24 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 14 d(off) Fall Time t 6.1 f 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.