NTTFS4C02N MOSFET Power, Single, N-Channel, 8FL 30 V, 170 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2.25 m 10 V 30 V 170 A Applications 3.1 m 4.5 V DCDC Converters Power Load Switch NChannel MOSFET Notebook Battery Management D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS G (4) Continuous Drain T = 25C I 29 A D A Current R (Note 1) JA T = 85C 21 S (1,2,3) A Power Dissipation R T = 25C P 2.7 W JA A D (Note 1) MARKING DIAGRAM 1 Continuous Drain I A T = 25C 36 A D 1 Current R 10 s S D JA T = 85C 26 4C02 (Note 1) WDFN8 S D A AYWW ( 8FL) S D Power Dissipation T = 25C P 4.2 W A D CASE 511AB G D R 10 s (Note 1) JA Steady State Continuous Drain T = 25C I 16 A A D 4C02 = Specific Device Code Current R (Note 2) JA T = 85C 12 A = Assembly Location A Y = Year Power Dissipation T = 25C P 0.83 W A D WW = Work Week R (Note 2) JA = PbFree Package Continuous Drain T = 25C I 170 A D C (Note: Microdot may be in either location) Current R (Note 1) JC T = 85C 120 C Power Dissipation T = 25C P 91 W C D ORDERING INFORMATION R (Note 1) JC Device Package Shipping Pulsed Drain Current T = 25C, t = 10 s I 500 A A p DM NTTFS4C02NTAG WDFN8 1500 / Tape & Operating Junction and Storage Temperature T , 55 to C J (PbFree) Reel T +150 stg For information on tape and reel specifications, Source Current (Body Diode) I 100 A S including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Drain to Source dV/dt dV/dt 6.0 V/ns Brochure, BRD8011/D. Single Pulse DraintoSource Avalanche Energy E 162 mJ AS (I = 37 A ) (Note 3) L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 7 NTTFS4C02N/DNTTFS4C02N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 10 V, I = 36 A, E = 65 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 1.4 JC JunctiontoAmbient Steady State (Note 4) R 46 JA C/W JunctiontoAmbient Steady State (Note 5) 150 R JA JunctiontoAmbient (t 10 s) (Note 4) R 30 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 13.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J A V = 30 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 1.9 2.25 DS(on) GS D m V = 4.5 V I = 20 A 2.7 3.1 GS D Forward Transconductance g V = 1.5 V, I = 50 A 140 S FS DS D Gate Resistance R 0.9 G CHARGES AND CAPACITANCES Input Capacitance C 2980 ISS Output Capacitance C 1200 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 55 RSS Output Charge Q V = 0 V, V = 15 V 25 nC OSS GS DD Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.018 RSS ISS GS DS Total Gate Charge Q 20 G(TOT) Threshold Gate Charge Q 4.7 G(TH) nC GatetoSource Charge Q 8.5 V = 4.5 V, V = 15 V I = 50 A GS GS DS D GatetoDrain Charge Q 4 GD Gate Plateau Voltage V 2.8 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 50 A 45 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2