MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.2 Final Power Management & Multimarket600VCoolMOE6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMO is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMO E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applicationsevenmoreefficient,morecompact,lighter,andcooler. drain pin 2 Features gate Extremely low losses due to very low FOM Rdson*Qgand Eoss pin 1 Very high commutation ruggedness Easy to use/drive source 1) JEDEC qualified, Pb-free plating, halogen free pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gateorseparate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 0.52 DS(on),max Q 23.4 nC g,typ I 22 A D,pulse E 400V 2.1 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPA60R520E6 PG-TO220 FullPAK 6R520E6 IFX CoolMOS Webpage IPP60R520E6 PG-TO220 IFX Designtools 1) J-STD20and JESD22 Final Data Sheet 2 Rev. 2.0, 2010-04-09 Rev. 2.2, 2014-12-10