NTTFS4C10N MOSFET Power, Single, N-Channel, 8FL 30 V, 44 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D Optimized Gate Charge to Minimize Switching Losses 7.4 m 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 30 V 44 A Compliant 11 m 4.5 V Applications NChannel MOSFET DCDC Converters Power Load Switch D (58) Notebook Battery Management MAXIMUM RATINGS (T = 25C unless otherwise stated) J G (4) Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS S (1,2,3) GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 13.3 A D Current R (Note 1) JA MARKING DIAGRAM T = 80C 9.9 A 1 Power Dissipation R T = 25C P 2.09 W JA A D 1 S D (Note 1) 4C10 WDFN8 S D Continuous Drain I A T = 25C 18.2 AYWW A D ( 8FL) S D Current R 10 s JA G D CASE 511AB T = 80C 13.6 (Note 1) A Power Dissipation T = 25C P 3.9 W A D 4C10 = Specific Device Code R 10 s (Note 1) Steady JA A = Assembly Location State Continuous Drain T = 25C I 8.2 A D A Y = Year Current R (Note 2) JA WW = Work Week T = 80C 6.1 A = PbFree Package Power Dissipation T = 25C P 0.79 W A D R (Note 2) (Note: Microdot may be in either location) JA Continuous Drain T = 25C I 44 A D C Current R (Note 1) JC T = 80C 33 C ORDERING INFORMATION Power Dissipation T = 25C P 23.6 W C D Device Package Shipping R (Note 1) JC NTTFS4C10NTAG WDFN8 1500 / Tape & Pulsed Drain Current T = 25C, t = 10 s I 128 A A p DM (PbFree) Reel Operating Junction and Storage Temperature T , 55 to C J T +150 stg NTTFS4C10NTWG WDFN8 5000 / Tape & (PbFree) Reel Source Current (Body Diode) I 20 A S For information on tape and reel specifications, Drain to Source dV/dt dV/dt 6.0 V/ns including part orientation and tape sizes, please Single Pulse DraintoSource Avalanche Energy E 31 mJ AS refer to our Tape and Reel Packaging Specification (T = 25C, V = 50 V, V = 10 V, I = 25 A , J DD GS L pk Brochure, BRD8011/D. L = 0.1 mH, R = 25 ) (Note 3) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2019 Rev. 3 NTTFS4C10N/DNTTFS4C10N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 10 V, I = 17 A, E = 14 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.3 JC JunctiontoAmbient Steady State (Note 4) R 59.9 JA C/W JunctiontoAmbient Steady State (Note 5) 157.8 R JA JunctiontoAmbient (t 10 s) (Note 4) R 31.8 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 7.1 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.9 7.4 DS(on) GS D m V = 4.5 V I = 15 A 8.8 11 GS D Forward Transconductance g V = 1.5 V, I = 15 A 43 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 993 ISS Output Capacitance C 574 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 163 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.164 RSS ISS GS DS Total Gate Charge Q 9.7 G(TOT) Threshold Gate Charge Q 1.5 G(TH) nC GatetoSource Charge Q 2.8 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.8 GD Gate Plateau Voltage V 3.2 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.6 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2