X-On Electronics has gained recognition as a prominent supplier of STD18N60M6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD18N60M6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD18N60M6 STMicroelectronics

STD18N60M6 electronic component of STMicroelectronics
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Part No.STD18N60M6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STD18N60M6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.912 ea
Line Total: USD 2.91 
Availability - 2251
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2251
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.912
5 : USD 2.632
9 : USD 1.988
24 : USD 1.89

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STD18N60M6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD18N60M6 and other electronic components in the MOSFETs category and beyond.

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STD18N60M6 Datasheet N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD18N60M6 600 V 280 m 13 A 3 2 1 Reduced switching losses DPAK Lower R per area vs previous generation DS(on) Low gate input resistance D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications LLC converters S(3) Boost PFC converters AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STD18N60M6 Product summary Order code STD18N60M6 Marking 18N60M6 Package DPAK Packing Tape and reel DS12843 - Rev 2 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD18N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 13 case I A D Drain current (continuous) at T = 100 C 8.2 case (1) I Drain current (pulsed) 38 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 13 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 2 1. When mounted on 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 2.7 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 210 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12843 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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