DMNH4005SCTQ
Green
40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Low Input Capacitance
D
V R
(BR)DSS DS(ON)
T = +25C
C
Low Input/Output Leakage
40V 150A
4.0m @ V = 10V
GS
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
This MOSFET is designed to meet the stringent requirements of Case: TO220AB
automotive applications. It is qualified to AEC-Q101, supported by a
Case Material: Molded Plastic, Green Molding Compound.
PPAP and is ideal for use in:
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Motor Control
Solderable per MIL-STD-202, Method 208
Backlighting
Terminal Connections: See Diagram Below
DC-DC Converters
Weight: 1.85 grams (Approximate)
Power Management Functions
D
TO220AB
G
S
Top View
Bottom View Pin Out Configuration
Top View Equivalent Circuit
Ordering Information (Note 5)
Part Number Case Packaging
DMNH4005SCTQ TO220AB 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH4005SCTQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 40 V
V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 150
C
Continuous Drain Current V = 10V I A
GS D
State 100
TC = +100C
90
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) A
I
DM
Maximum Continuous Body Diode Forward Current (Note 6) 80 A
I
S
Avalanche Current (Note 7) L=1mH 30 A
I
AS
Avalanche Energy (Note 7) L=1mH 500 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
165
T = +25C
C
Power Dissipation W
P
D
100
T = +70C
C
0.9
Thermal Resistance, Junction to Case C/W
RJC
Operating and Storage Temperature Range -55 to +175 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 3.4 4.0 m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 2,846
Ciss
V = 20V, V = 0V
DS GS
742
Output Capacitance pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 242
C
rss
Gate Resistance 1.9
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
48
Total Gate Charge (V = 10V) Q
GS g
23
Total Gate Charge (V = 4.5V) Q
GS g
nC V = 20V, I = 20A
DD D
9.5
Gate-Source Charge Q
gs
11.5
Gate-Drain Charge Q
gd
6.6
Turn-On Delay Time t
D(ON)
12.1
Turn-On Rise Time t
R V = 20V, V = 10V,
DD GS
ns
18.3
Turn-Off Delay Time R = 1, I = 20A
t G D
D(OFF)
Turn-Off Fall Time 4.9
t
F
Reverse Recovery Time 29 ns
t
RR
I = 15A, di/dt = 100A/s
F
Reverse Recovery Charge 24 nC
Q
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
August 2016
DMNH4005SCTQ
www.diodes.com Diodes Incorporated
Document number: DS38859 Rev. 1 - 2