Green
DMTH4005SK3Q
40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Rated to +175C Ideal for High Ambient Temperature
D
BV R Max
DSS DS(ON)
T = +25C
C
Environments
100% Unclamped Inductive Switching Ensures More Reliable
40V 95A
4.5m @ VGS = 10V
and Robust End Application
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET has been designed to meet the stringent requirements
Case: TO252 (DPAK)
of Automotive applications. It is qualified to AEC-Q101, supported by
Case Material: Molded Plastic, Green Molding Compound. UL
a PPAP and is ideal for use in:
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Engine Management Systems
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Body Control Electronics
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.33 grams (Approximate)
D D
TO252 (DPAK)
G
D
G S
S
Top View
Top View
Internal Schematic
Pin Out
Ordering Information (Note 5)
Part Number Case Packaging
DMTH4005SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4005SK3Q
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
C
95
Continuous Drain Current (Note 7) (Note 10) I A
D
T = +100C
C 73
Maximum Body Diode Forward Current (Note 7) T = +25C I 83 A
C S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 150 A
DM
32.5
Avalanche Current, L=0.1mH I A
AS
Avalanche Energy, L=0.1mH E 52.8 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) T = +25C P 2.1 W
A D
Thermal Resistance, Junction to Ambient (Note 6) R 38 C/W
JA
Total Power Dissipation (Note 7) T = +25C P 100 W
C D
Thermal Resistance, Junction to Case (Note 7) 1.5 C/W
RJC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 3.6 4.5 m V = 10V, I = 50A
DS(ON) GS D
Diode Forward Voltage 0.9 V
V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 3,062
iss
V = 20V, V = 0V,
DS GS
902.2
Output Capacitance C pF
oss
f = 1MHz
Reverse Transfer Capacitance C 179.2
rss
0.67
Gate Resistance R V = 0V, V = 0V, f = 1MHz
G DS GS
Total Gate Charge 49.1
Q
g
V = 20V, I = 50A,
DD D
Gate-Source Charge 10.3 nC
Q
gs
Gate-Drain Charge 13
Q
gd
Turn-On Delay Time 8.7
t
D(ON)
Turn-On Rise Time 6.8
t V = 20V, V = 10V,
R DD GS
ns
18.6
Turn-Off Delay Time t I = 50A, R = 3
D(OFF) D G
Turn-Off Fall Time t 7.3
F
31.8
Body Diode Reverse Recovery Time t ns
RR
I = 50A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q 26.5 nC
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
10. Package limited.
2 of 7
DMTH4005SK3Q August 2016
Diodes Incorporated
www.diodes.com
Document number: DS38661 Rev. 2 - 2