STD18NF03L Datasheet Automotive-grade N-channel 30 V, 38 m typ., 17 A STripFET II Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD18NF03L 30 V < 50 m 17 A 3 2 1 DPAK AEC-Q101 qualified Exceptional dv/dt capability D(2, TAB) 100% avalanche tested Low gate charge Applications G(1) Switching applications Description S(3) AM01475v1 noZen This Power MOSFET has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD18NF03L Product summary Order code STD18NF03L Marking 18NF03L Package DPAK Packing Tape and reel DS5403 - Rev 2 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office.STD18NF03L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0 V) 30 V DS GS V Gate-source voltage 16 V GS Drain current (continuous) at T = 25 C 17 A C I D Drain current (continuous) at T = 100 C 12 A C (1) I Drain current (pulsed) 68 A DM P Total power dissipation at T = 25 C 30 W TOT C Derating Factor 0.2 W/C (2) dv/dt . Peak diode recovery avalanche energy 7 V/ns (3) E Single pulse avalanche energy 200 mJ AS T Storage temperature range stg -55 to 175 C T Operating junction temperature range J 1. Pulse width limited by safe operating area. 2. I 17 A, di/dt 300 A/s, V = V , T T max. SD DD (BR)DSS J J 3. Starting T = 25 C, I = 8.5 A, V = 15 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 5.0 C/W thj-case R Thermal resistance junction-to ambient max 100 C/W thj-amb T Maximum lead temperature for soldering purpose 275 C J DS5403 - Rev 2 page 2/15