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X-On Electronics has gained recognition as a prominent supplier of STD18N65M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD18N65M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD18N65M5 STMicroelectronics

STD18N65M5 electronic component of STMicroelectronics
STD18N65M5 STMicroelectronics
STD18N65M5 MOSFETs
STD18N65M5  Semiconductors

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See Product Specifications
Part No. STD18N65M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
Datasheet: STD18N65M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 1.7368 ea
Line Total: USD 4342 
Availability - 7275
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2051
Ship by Fri. 10 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 3.878
3 : USD 3.682
6 : USD 3.024
16 : USD 2.856
250 : USD 2.772
500 : USD 2.744

4850
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 12
Multiples : 1
12 : USD 5.6225
17 : USD 3.7375
50 : USD 3.1363
100 : USD 2.665
500 : USD 2.2263
1000 : USD 2.0312
2500 : USD 1.885

2425
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 1.8225

7275
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 1.7368
5000 : USD 1.7251

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Category
Brand Category
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD18N65M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD18N65M5 and other electronic components in the MOSFETs category and beyond.

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STB18N65M5, STD18N65M5 Datasheet N-channel 650 V, 0.198 typ., 15 A, MDmesh M5 Power MOSFETs in DPAK and DPAK packages Features TAB TAB Order codes V T R max. I DS Jmax DS(on) D 3 STB18N65M5 2 2 710 V 0.220 15 A 1 3 STD18N65M5 1 2 D PAK DPAK Extremely low R DS(on) Low gate charge and input capacitance D(2, TAB) Excellent switching performance 100% avalanche tested Applications G(1) Switching applications Description S(3) AM01475v1 noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STB18N65M5 STD18N65M5 Product summary STB18N65M5 Order code STB18N65M5 Marking 18N65M5 2 Package D PAK Packing Tape and reel STD18N65M5 Order code STD18N65M5 Marking 18N65M5 Package DPAK Packing Tape and reel DS9171 - Rev 2 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB18N65M5, STD18N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 15 A C I D Drain current (continuous) at T = 100 C 9.4 A C (1) I Drain current (pulsed) 60 A DM P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range 1. Pulse width limited by safe operating area. 2. I 15 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK D PAK R Thermal resistance junction-case 1.14 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 210 mJ AS j D AR DD DS9171 - Rev 2 page 2/23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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