STB18N65M5, STD18N65M5 Datasheet N-channel 650 V, 0.198 typ., 15 A, MDmesh M5 Power MOSFETs in DPAK and DPAK packages Features TAB TAB Order codes V T R max. I DS Jmax DS(on) D 3 STB18N65M5 2 2 710 V 0.220 15 A 1 3 STD18N65M5 1 2 D PAK DPAK Extremely low R DS(on) Low gate charge and input capacitance D(2, TAB) Excellent switching performance 100% avalanche tested Applications G(1) Switching applications Description S(3) AM01475v1 noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STB18N65M5 STD18N65M5 Product summary STB18N65M5 Order code STB18N65M5 Marking 18N65M5 2 Package D PAK Packing Tape and reel STD18N65M5 Order code STD18N65M5 Marking 18N65M5 Package DPAK Packing Tape and reel DS9171 - Rev 2 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB18N65M5, STD18N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 15 A C I D Drain current (continuous) at T = 100 C 9.4 A C (1) I Drain current (pulsed) 60 A DM P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range 1. Pulse width limited by safe operating area. 2. I 15 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK D PAK R Thermal resistance junction-case 1.14 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 210 mJ AS j D AR DD DS9171 - Rev 2 page 2/23