STD16NF06T4 STMicroelectronics

STD16NF06 N-Channel 60V - 0.060 - 16A - DPAK STripFET II Power MOSFET General features V R I Type DSS DS(on) D STD16NF06 60V <0.070 16A 3 Typical R = 0.060 DS(on) 1 DPAK Exceptional dv/dt Capability TO-252 100% Avalanche Tested Application Oriented Characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility Applications Audio Amplifiers Power Tools Automotive Environment Order codes Part Number Marking Package Packaging STD16NF06T4 D16NF06 TO-252 TAPE & REEL Rev 1 January 2006 1/11 www.st.com 111 Electrical ratings STD16NF06 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0V) 60 V DS GS V Drain-gate Voltage (R = 20 k ) 60 V DGR GS V Gate-Source Voltage 20 V GS I Drain Current (continuous) at T = 25C 16 A D C I Drain Current (continuous) at T = 100C 11 A D C I Note 4 Drain Current (pulsed) 64 A DM P Total Dissipation at T = 25C 40 W TOT C Derating Factor 0.27 W/C Peak Diode Recovery voltage slope 10.5 V/ns dv/dt EAS Single Pulse Avalanche Energy 178 mJ T J Operating Junction Temperature -55 to 175 C T Storage Temperature stg Table 2. Thermal data R Thermal Resistance Junction-case Max 3.75 C/W thJC R Thermal Resistance Junction-amb Max 100 C/W thJA Maximum Lead Temperature For Soldering T 275 C l Purpose 2/11