X-On Electronics has gained recognition as a prominent supplier of STD18N55M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD18N55M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD18N55M5 STMicroelectronics

STD18N55M5 electronic component of STMicroelectronics
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Part No.STD18N55M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 550V 0.18 13A Mdmesh V Power MOS
Datasheet: STD18N55M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.9575 ea
Line Total: USD 3.96 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 2.0826
5000 : USD 2.0709
10000 : USD 2.0592
15000 : USD 2.0475
20000 : USD 2.0358
25000 : USD 2.0241
30000 : USD 2.0124
50000 : USD 1.9994
100000 : USD 1.9877

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 6.5058
10 : USD 5.6304
100 : USD 4.6136
500 : USD 3.9274
1000 : USD 3.906

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 6.5058
10 : USD 5.6304
100 : USD 4.6136
500 : USD 3.9274
1000 : USD 3.906

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 4.0507

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 3.9575
10 : USD 3.1096
100 : USD 2.5096
500 : USD 2.2262
1000 : USD 1.9012

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 2.1465

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8945
25 : USD 1.8871
62 : USD 1.8797
125 : USD 1.8724
312 : USD 1.8651
625 : USD 1.8579
1250 : USD 1.8508

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 1.9215

0
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 4.0565
10 : USD 3.597
30 : USD 3.3232
100 : USD 3.0475
500 : USD 2.9199
1000 : USD 2.8638

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 8.6014
10 : USD 3.0986
25 : USD 2.9277

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 2500
1 : USD 4.6884
3 : USD 4.1043
5 : USD 3.2955
13 : USD 3.1144

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 1
5 : USD 3.8208

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 1
5 : USD 2.2396
10 : USD 2.1352
25 : USD 1.8123
100 : USD 1.7909
250 : USD 1.6876

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Continuous Drain Current
Drain-Source Breakdown Voltage
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We are delighted to provide the STD18N55M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD18N55M5 and other electronic components in the MOSFETs category and beyond.

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STD18N55M5, STP18N55M5 Datasheet N-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages Features V DS TAB R max. Order code Package TAB DS(on) T jmax. 2 3 STD18N55M5 DPAK 1 600 V 0.192 3 2 STP18N55M5 TO-220 DPAK TO-220 1 Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications G(1) Switching applications S(3) AM01475v1 noZen Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STD18N55M5 STP18N55M5 DS6705 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STD18N55M5, STP18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 16 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 64 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 16 A, di/dt 400 A/s V < V , V = 340 V. SD DS peak (BR)DSS DD Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance, junction-to-case 1.14 C/W thJC R Thermal resistance, junction-to-ambient 62.5 C/W thJA (1) R Thermal resistance, junction-to-board 50 C/W thJB 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 210 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6705 - Rev 5 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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