STD150N3LLH6 STMicroelectronics

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type V R max I DSS DS(on) D STD150N3LLH6 30 V 0.0028 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 80 A 1 1 STu150N3LLH6 30 V 0.0033 80 A IPAK DPAK R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) 3 2 High avalanche ruggedness 1 TO-220 Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description OR 4 This product utilizes the 6th generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. 3 - V Table 1. Device summary Order codes Marking Package Packaging STD150N3LLH6 150N3LLH6 DPAK Tape and reel STP150N3LLH6 150N3LLH6 TO-220 Tube STU150N3LLH6 150N3LLH6 IPAK Tube September 2009 Doc ID 15227 Rev 3 1/16 www.st.com 16 Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit . 8 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 15 2/16 Doc ID 15227 Rev 3