X-On Electronics has gained recognition as a prominent supplier of STD155N3H6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD155N3H6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD155N3H6 STMicroelectronics

Name: STD155N3H6
Brand: STMicroelectronics
SKU: STD155N3H6_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STD155N3H6 electronic component of STMicroelectronics

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Part No.	STD155N3H6
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET Nchannel 30 V 2.5 m Ohm80A DPAK STripFET
Datasheet:	STD155N3H6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

62: USD 1.046 ea
Line Total: USD 64.85

Availability - 4384
Ship by Mon. 21 Apr to Fri. 25 Apr

MOQ: 62 Multiples: 1
Pack Size: 1

STD155N3H6 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

4384

Ship by Mon. 21 Apr to Fri. 25 Apr

MOQ : 62
Multiples : 1

62 : USD 1.046

4384

Ship by Mon. 21 Apr to Fri. 25 Apr

MOQ : 62
Multiples : 1

62 : USD 1.0814

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

80 A 80 A

Vds - Drain-Source Breakdown Voltage

30 V 30 V

Rds On - Drain-Source Resistance

3 mOhms 3 mOhms

Transistor Polarity

N - Channel N - Channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

110 W 110 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

DPAK DPAK

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

62 nC 62 nC

Qualification

Aec - Q101 Aec - Q101

Configuration

Single Single

Series

Std155n3h6 Std155n3h6

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

80 A 80 A

Drain-Source Breakdown Voltage

30 V 30 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

110 W 110 W

Rds On

3 Mohms 3 Mohms

Factory Pack Quantity :

2500 2500

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541290000 8541290000

Hts Code

8541290075 8541290075

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

STD155N3H6 Alternative Parts

We are delighted to provide the STD155N3H6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD155N3H6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m , 80 A, DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D (1) STB155N3H6 30 V < 3 m 80 A (1) STD155N3H6 30 V < 3 m 80 A 1. Limited by wire bonding 3 3 1 1 R * Q industry benchmark DS(on) g DPAK DPAK Extremely low on-resistance R DS(on) High avalanche ruggedness Application Switching applications Automotive Figure 1. Internal schematic diagram Description D (TAB or 2) These devices are 30 V N-channel Power MOSFETs realized using ST s proprietary STripFET VI technology. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STB155N3H6 DPAK 155N3H6 Tape and reel STD155N3H6 DPAK May 2011 Doc ID 018793 Rev 2 1/ www.st.com 18 Contents STB155N3H6, STD155N3H6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/ Doc ID 018793 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Availability	Price	Buy Price	Quantity
4384 Ship by Mon. 21 Apr to Fri. 25 Apr MOQ : 62 Multiples : 1	62 : USD 1.046

4384 Ship by Mon. 21 Apr to Fri. 25 Apr MOQ : 62 Multiples : 1	62 : USD 1.0814

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