STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DSS (1) D TOT max. DPAK STD25N10F7 100 V 0.035 25 A 40 W STF25N10F7 100 V 0.035 19 A 25 W TAB STP25N10F7 100 V 0.035 25 A 50 W 1. V = 10 V GS 3 3 Ultra low on-resistance 2 2 1 1 100% avalanche tested TO-220FP TO-220 Applications Figure 1. Internal schematic diagram Switching applications % 7 Description th These devices utilize the 7 generation of design rules of STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all * DS(on) packages. 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STD25N10F7 25N10F7 DPAK Tape and reel STF25N10F7 25N10F7 TO-220FP Tube STP25N10F7 25N10F7 TO-220 Tube September 2013 DocID025265 Rev 1 1/21 This is information on a product in full production. www.st.comContents STD25N10F7, STF25N10F7, STP25N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID025265 Rev 1