STD36P4LLF6 STMicroelectronics

STD36P4LLF6 P-channel 40 V, 0.0175 typ.,36 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD36P4LLF6 40 V 0.0205 36 A 60 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all G(1) DS(on) packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packaging STD36P4LLF6 36P4LLF6 DPAK Tape and reel March 2015 DocID025616 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STD36P4LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID025616 Rev 2