STD5NK40Z-1, STD5NK40ZT4 Datasheet N-channel 400 V, 1.45 typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages Features V R max. P Order codes Package DS DS(on) TOT TAB TAB STD5NK40Z-1 IPAK 2 3 400 V 1.80 45 W 1 3 STD5NK40ZT4 DPAK 2 IPAK 1 DPAK 100% avalanche tested Gate charge minimized Very low intrinsic capacitance D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD5NK40Z-1 STD5NK40ZT4 DS2854 - Rev 4 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5NK40Z-1, STD5NK40ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 400 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 3 A D C I Drain current (continuous) at T = 100 C 1.9 A D C (1) I Drain current (pulsed) 12 A DM P Total dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 2.8 kV T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 3 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value SymbolParameter Unit IPAK DPAK R Thermal resistance junction-case 2.78 C/W thj-case R Thermal resistance junction-ambient 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 3 A AR (pulse width limited by T max) j Single pulse avalanche energy E 130 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS2854 - Rev 4 page 2/23