STD5NM50T4 Datasheet N-channel 500 V, 0.7 typ., 7.5 A, MDmesh Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD5NM50T4 500 V 0.8 7.5 A 3 2 1 100% avalanche tested DPAK Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications Switching applications G(1) Description This N-channel Power MOSFET is developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process S(3) AM01475v1 noZen with the company s PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market. Product status link STD5NM50T4 Product summary Order code STD5NM50T4 Marking D5NM50 Package DPAK Packing Tape and reel DS1945 - Rev 11 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5NM50T4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 500 V DS V Drain-gate voltage (R = 20 k) 500 V DGR GS V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 7.5 D C A I Drain current (continuous) at T = 100 C 4.7 D C (1) I Drain current (pulsed) 30 A DM P Total dissipation at T = 25 C 100 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 5 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.25 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 oz Cu board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 2.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 300 mJ AS j D AR DD DS1945 - Rev 11 page 2/18