STD616A-1 STMicroelectronics

STD616A HIGH VOLTAGE NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX-1 ) SURFACE-MOUNTING DPAK (TO-252) 3 3 POWER PACKAGE IN TAPE & REEL 2 1 1 (SUFFIXT4 ) MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION IPAK DPAK TO-251 TO-252 APPLICATIONS: (Suffix-1 ) (SuffixT4 ) SWITCH MODE POWER SUPPLIES DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand INTERNAL SCHEMATIC DIAGRAM capability. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 1000 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 450 V V Emitter-Base Voltage (I = 0) 12 V EBO C I Collector Current 1.6 A C I Collector Peak Current (t < 5 ms) 2.4 A CM p IB Base Current 0.8 A I Base Peak Current (t < 5 ms) 1.2 A BM p o P Total Dissipation at T = 25 C20 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 June 2003 STD616A THERMAL DATA o R Thermal Resistance Junction-case Max 6.25 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 1000 V 50 A CES CE o Current (V = 0 V) V = 1000 V T = 125 C 0.5 mA BE CE j V * Collector-Emitter I = 100 mA L = 25 mH 450 V CEO(sus) C Sustaining Voltage (I = 0) B V Emitter-Base Voltage I = 1 mA 12 V EBO E (I = 0) C V * Collector-Emitter I = 250 mA I = 65 mA 0.3 V CE(sat) C B Saturation Voltage IC = 0.8 A IB = 250 mA 0.5 V VBE(sat)* Base-Emitter IC = 250 mA IB = 65 mA 1 V Saturation Voltage I = 0.8 A I = 250 mA 1.2 V C B h * DC Current Gain 17 FE IC = 200 A VCE = 5 V I = 300 mA V = 5 V 25 C CE 12 I = 480 mA V = 5 V C CE 4 I = 1.6 A V = 5 V C CE RESISTIVE LOAD VCC = 250 V IC = 250 mA t Turn On Time I = 65 mA I = -130 mA 0.2 s on B1 B2 t Storage Time 5 s s t Fall Time 0.65 s f RESISTIVE LOAD V = 250 V I = 0.8 A CC C t Turn On Time I = 160 mA I = -0.4 A 1 s on B1 B2 t Storage Time 2.5 s s t Fall Time 0.35 s f INDUCTIVE LOAD V = 300 V I = 250 mA cl C t Storage Time I = 65 mA I = -130 mA 5 s s B1 B2 t Fall Time 0.5 s f L = 200 H INDUCTIVE LOAD V = 300 V I = 0.8 A cl C t Storage Time I = 160 mA I = -0.4 A 2.5 s s B1 B2 t Fall Time 0.25 s f L = 200 H * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6