X-On Electronics has gained recognition as a prominent supplier of STE70NM60 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STE70NM60 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STE70NM60 STMicroelectronics

STE70NM60 electronic component of STMicroelectronics
STE70NM60 STMicroelectronics
STE70NM60 MOSFETs
STE70NM60  Semiconductors

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See Product Specifications
Part No. STE70NM60
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 600 Volt 70 Amp
Datasheet: STE70NM60 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 64.1887 ea
Line Total: USD 64.19 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 68.7232
10 : USD 51.566
20 : USD 51.5526
100 : USD 51.539
200 : USD 50.7143

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STE70NM60 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STE70NM60 and other electronic components in the MOSFETs category and beyond.

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STE70NM60 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmeshPower MOSFET TYPE V R I DSS DS(on) D STE70NM60 600V < 0.055 70 A TYPICAL R (on) = 0.050 DS HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL ISOTOP INDUSTRYS LOWEST ON-RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Companys PowerMESH horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STE70NM60 E70NM60 ISOTOP TUBE March 2003 1/8STE70NM60 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 600 V DS GS V Drain-gate Voltage (R =20k) 600 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 70 A D C I Drain Current (continuous) at T = 100C 44 A D C I ( ) Drain Current (pulsed) 280 A DM P Total Dissipation at T = 25C 600 W TOT C V Gate source ESD(HBM-C=100pF, R=15K) 6KV ESD(G-S) Derating Factor 4.5 W/C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j ()Pulse width limited by safe operating area (1) I 70A, di/dt 400 A/s, V V ,T T SD DD (BR)DSS j JMAX. THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.2 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 30 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 1.4 J AS (starting T = 25 C, I =I ,V =35V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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