STF16N60M6 STMicroelectronics

STF16N60M6 N-channel 600 V, 0.26 typ., 12 A MDmesh M6 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF16N60M6 600 V 0.32 12 A Reduced switching losses Lower R x area vs previous generation DS(on) Low gate input resistance 100% avalanche tested Zener-protected TO-220FP Applications Switching applications Figure 1: Internal schematic diagram LLC converters D(2) Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ G(1) MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STF16N60M6 16N60M6 TO-220FP Tube March 2017 DocID030461 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STF16N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID030461 Rev 1