X-On Electronics has gained recognition as a prominent supplier of STD9N65M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD9N65M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD9N65M2 STMicroelectronics

STD9N65M2 electronic component of STMicroelectronics
STD9N65M2 STMicroelectronics
STD9N65M2 MOSFETs
STD9N65M2  Semiconductors

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See Product Specifications
Part No. STD9N65M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STD9N65M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.7691 ea
Line Total: USD 1922.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.7691
5000 : USD 0.7629

0
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 1.8941
10 : USD 1.4908
100 : USD 1.1736
500 : USD 0.9531
1000 : USD 0.8464
5000 : USD 0.8388

0
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 4.5227
10 : USD 1.6313
100 : USD 1.2758
500 : USD 1.0562
1000 : USD 0.8282
2500 : USD 0.8021

0
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 35
Multiples : 1
35 : USD 1.1565
50 : USD 1.0055

0
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 35
Multiples : 1
35 : USD 1.1565
50 : USD 1.0055

0
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 35
Multiples : 35
35 : USD 1.1565
50 : USD 1.0055

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Brand
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Rise Time
Typical Turn-Off Delay Time
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We are delighted to provide the STD9N65M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD9N65M2 and other electronic components in the MOSFETs category and beyond.

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STD9N65M2, STF9N65M2 STP9N65M2, STU9N65M2 Datasheet N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features TAB 3 2 V R max. I Order codes Package DS DS(on) D 1 DPAK TAB STD9N65M2 DPAK 3 2 1 STF9N65M2 TO-220FP IPAK 3 650 V 0.90 5 A 2 1 STP9N65M2 TO-220 TAB TO-220FP STU9N65M2 IPAK 3 Extremely low gate charge 2 1 TO-220 Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) Description AM01475V1 These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 DS10197 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220, IPAK TO-220FP V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 5 5 D C A (1) I Drain current (continuous) at T = 100 C 3.2 D C 3.2 (2) I Drain current (pulsed) 20 A DM P Total power dissipation at T = 25 C 60 20 W TOT C Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Current limited by package. 2. Pulse width is limited by safe operating area. 3. I 5 A, di/dt = 400 A/s V < V , V = 400 V. SD DS(peak) (BR)DSS DD 4. V 520 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 IPAK R Thermal resistance junction-case 2.08 6.25 2.08 C/W thj-case R Thermal resistance junction-pcb 50 C/W thj-pcb (1) R Thermal resistance junction-ambient 62.5 100 C/W thj-amb 2 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 1 A AR (pulse width limited by T max) J Single pulse avalanche energy E 105 mJ AS (starting T = 25 C, I = I V = 50 V) J D AR DD DS10197 - Rev 3 page 2/28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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