STD9N80K5 STMicroelectronics

STD9N80K5 Datasheet N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFET in a DPAK package Features V R max. I P Order code TAB DS DS(on) D TOT STD9N80K5 800 V 0.90 7 A 110 W 3 2 1 Industrys lowest RDS(on) x area DPAK Industrys best figure of merit (FoM) Ultra-low gate charge ( 100% avalanche tested D 2, TAB) Zener-protected ( 1 ) Applications G Switching applications Description ( ) S 3 AM15572V1 This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status STD9N80K5 Product summary Order code STD9N80K5 Marking 9N80K5 Package DPAK Packing Tape and reel DS11297 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 7 A D C I Drain current (continuous) at T = 100 C 4.4 A D C (1) I Drain current (pulsed) 28 A D P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 7 A, di/dt 100 A/s V < V V = 640 V SD DS( peak) (BR)DSS DD 3. V 640 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 200 mJ AS j D AR DD DS11297 - Rev 3 page 2/19