0.8 mm Si8823EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MICRO FOOT 0.8 x 0.8 S TrenchFET Gen III p-channel power MOSFET 22 SS Compact 0.8 mm x 0.8 mm outline area 33 Low 0.4 mm max. profile R rating at V = -1.5 V DS(on) GS Typical ESD protection: 1900 V HBM 11 GG Material categorization: for definitions of compliance 44 1 D please see www.vishay.com/doc 99912 Backside View Bump Side View APPLICATIONS S PRODUCT SUMMARY Load switch V (V) -20 DS Power management in battery- R max. ( ) at V = -4.5 V 0.095 DS(on) GS G operated, mobile, and wearable R max. ( ) at V = -2.5 V 0.120 DS(on) GS devices R max. ( ) at V = -1.8 V 0.200 DS(on) GS R max. ( ) at V = -1.5 V 0.335 DS(on) GS Q typ. (nC) 6.6 g P-Channel MOSFET a I (A) -2.7 D D Configuration Single ORDERING INFORMATION Package MICRO FOOT Lead (Pb)-free and halogen-free Si8823EDB-T2-E1 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -20 DS V Gate-source voltage V 8 GS a T = 25 C -2.7 A a T = 70 C -2.1 A Continuous drain current (T = 150 C) I J D b T = 25 C -1.9 A b T = 70 C -1.5 A A Pulsed drain current (t = 100 s) I -15 DM a T = 25 C -0.7 A Continuous source-drain diode current I S b T = 70 C -0.4 A a T = 25 C 0.9 A a T = 70 C 0.6 A Maximum power dissipation P W D b T = 25 C 0.5 A b T = 70 C 0.3 A Operating junction and storage temperature range T , T -55 to +150 J stg VPR C c Package reflow conditions 260 IR / convection THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, f Maximum junction-to-ambient 105 135 t 5 s R C/W thJA b, g Maximum junction-to-ambient 200 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A f. Maximum under steady state conditions is 185 C/W. g. Maximum under steady state conditions is 330 C/W. S16-1562-Rev. A, 08-Aug-16 Document Number: 76852 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxx xx 0.8 mmSi8823EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -20 - - V DS GS D V temperature coefficient V /T - -12.5 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.3 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.4 - -0.8 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I GSS V = 0 V, V = 8 V - - 5 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -20 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -1 A - 0.077 0.095 GS D V = -2.5 V, I = -1 A - 0.100 0.120 GS D a Drain-source on-state resistance R DS(on) V = -1.8 V, I = -0.5 A - 0.137 0.185 GS D V = -1.5 V, I = -0.5 A - 0.200 0.335 GS D a Forward transconductance g V = -5 V, I = -1 A - 6 - S fs DS D b Dynamic Input capacitance C - 580 - iss Output capacitance C -V = -10 V, V = 0 V, f = 1 MHz165- pF oss DS GS Reverse transfer capacitance C -75- rss V = -10 V, V = -8 V, I = -1 A - 11 17 DS GS D Total gate charge Q g V = -10 V, V = -4.5 V, I = -1 A - 6.6 10 DS GS D nC Gate-source charge Q -1 - gs V = -10 V, V = -4.5 V, I = -1 A DS GS D Gate-drain charge Q -1.5 - gd Gate resistance R f = 1 MHz - 20 - g Turn-on delay time t -16 30 d(on) Rise time t -3060 r V = -10 V, R = 10 , I -1 A, DD L D V = -4.5 V, R = 1 Turn-off delay time t -GEN g 60120 d(off) Fall time t -40 80 f ns Turn-on delay time t -7 15 d(on) Rise time t -2040 r V = -10 V, R = 10 , I -1 A, DD L D V = -8 V, R = 1 Turn-off delay time t -GEN g 75150 d(off) Fall time t -35 70 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -0.7 S A A Pulse diode forward current I -- -15 SM Body diode voltage V I = -1 A, V = 0 V - -0.8 -1.2 V SD S GS Body diode reverse recovery time t -20 40 ns rr Body diode reverse recovery charge Q - 7 15 nC rr I = -1 A, dI/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t - 12.5 - a ns Reverse recovery rise time t -7.5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1562-Rev. A, 08-Aug-16 Document Number: 76852 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000