PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175C Operating Temperature V = 55V DSS Fast Switching Fully Avalanche Rated R = 0.0165 DS(on) Lead-Free G Description I = 53A D Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in 2 D Pak TO-262 2 any existing surface mount package. The D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 53 D C GS I T = 100C Continuous Drain Current, V 10V 37 A D C GS I Pulsed Drain Current 180 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 107 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 28 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 JA www.irf.com 1 04/22/04IRFZ46NS/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I =1mA (BR)DSS J D R Static Drain-to-Source On-Resistance .0165 V =10V, I = 28A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 19 S V = 25V, I = 28A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 72 I = 28A g D Q Gate-to-Source Charge 11 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 26 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 76 I = 28A r D ns t Turn-Off Delay Time 52 R = 12 d(off) G t Fall Time 57 R = 0.98, See Fig. 10 f D Between lead, L Internal Source Inductance nH S 7.5 and center of die contact C Input Capacitance 1696 V = 0V iss GS C Output Capacitance 407 pF V = 25V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 583 152 I = 28A, L = 389mH AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 53 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 180 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 28A, V = 0V SD J S GS t Reverse Recovery Time 67 101 ns T = 25C, I = 28A rr J F Q Reverse Recovery Charge 208 312 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents Starting T = 25C, L = 389H J operation outside rated limits. R = 25, I = 28A. (See Figure 12) G AS This is a calculated value limited to TJ = 175C. I 28A, di/dt 220A/s, V V , SD DD (BR)DSS Calculated continuous current based on maximum allowable T 175C. J junction temperature. Package limitation current is 39A. ** When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com