IRLB8743PbF HEXFET Power MOSFET Applications Optimized for UPS/Inverter Applications V R max Qg DSS DS(on) High Frequency Synchronous Buck 30V 3.2m 36nC Converters for Computer Processor Power High Frequency Isolated DC-DC D Converters with Synchronous Rectification for Telecom and Industrial use S D G Benefits TO-220AB Very Low RDS(on) at 4.5V V IRLB8743PbF GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage GD S and Current Gate Drain Source Lead-Free Absolute Maximum Ratings Parameter Max. Units V 30 DS Drain-to-Source Voltage V 20 V Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 150 GS D C Continuous Drain Current, V 10V (Silicon Limited) 110 I T = 100C GS D C A 10V (Package Limited) 78 I T = 25C Continuous Drain Current, V C GS D I Pulsed Drain Current 620 DM 140 P T = 25C Maximum Power Dissipation C D W 68 P T = 100C Maximum Power Dissipation C D Linear Derating Factor 0.90 W/C -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R JC 1.11 Junction-to-Case R 0.5 CS Case-to-Sink, Flat Greased Surface C/W R JA 62 Junction-to-Ambient Notes through are on page 9 www.irf.com 1 04/22/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS 30 V V = 0V, I = 250A Drain-to-Source Breakdown Voltage GS D V /T DSS J 17 mV/C Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient D R DS(on) 2.5 3.2 V = 10V, I = 40A Static Drain-to-Source On-Resistance GS D m 3.5 4.2 V = 4.5V, I = 32A GS D V 1.35 1.8 2.35 V GS(th) Gate Threshold Voltage V = V , I = 100A DS GS D V /T -7.7 mV/C GS(th) J Gate Threshold Voltage Coefficient I 1.0 V = 24V, V = 0V DSS Drain-to-Source Leakage Current DS GS A 100 V = 24V, V = 0V, T = 125C DS GS J I GSS 100 V = 20V Gate-to-Source Forward Leakage GS nA -100 V = -20V Gate-to-Source Reverse Leakage GS gfs 190 S V = 15V, I = 32A Forward Transconductance DS D Q g 36 54 Total Gate Charge Q 9.1 V = 15V gs1 Pre-Vth Gate-to-Source Charge DS Q 4.2 nC V = 4.5V gs2 Post-Vth Gate-to-Source Charge GS Q I = 32A gd Gate-to-Drain Charge 13 D Q godr Gate Charge Overdrive 13 Q sw Switch Charge (Q + Q ) 17.2 gs2 gd Q oss nC V = 16V, V = 0V Output Charge 21 DS GS R Gate Resistance 0.85 1.5 G t d(on) 23 V = 15V, V = 4.5V Turn-On Delay Time DD GS t 92 I = 32A r Rise Time D ns t 25 d(off) Turn-Off Delay Time R = 1.8 G t 36 f Fall Time C iss 5110 V = 0V Input Capacitance GS C oss 960 pF V = 15V Output Capacitance DS C rss 440 = 1.0MHz Reverse Transfer Capacitance Avalanche Characteristics Parameter Typ. Max. Units E AS 310 mJ Single Pulse Avalanche Energy I AR 32 A Avalanche Current E 14 mJ AR Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol S Continuous Source Current 150 (Body Diode) showing the A I SM integral reverse Pulsed Source Current 620 (Body Diode) p-n junction diode. V SD 1.0 V T = 25C, I = 32A, V = 0V Diode Forward Voltage J S GS t rr 2944ns T = 25C, I = 32A, V = 15V Reverse Recovery Time DD J F Q di/dt = 200A/s rr 49 74 nC Reverse Recovery Charge t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com