New Product Si4712DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY a Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.013 at V = 10 V 14.6 GS SkyFET Monolithic TrenchFET Power 30 8.3 nC 0.0165 at V = 4.5 V 12.9 GS MOSFET and Schottky Diode 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook System Power - Low Side SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 Schottky Diode G Top Vie w N-Channel MOSFET S Ordering Information: Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 14.6 C T = 70 C 11.6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 10.3 b, c T = 70 C A 8.2 A I 50 Pulsed Drain Current DM T = 25 C 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 2.3 Single Pulse Avalanche Current I 15 AS L = 0.1 mH E Single Pulse Avalanche Energy 11.25 mJ AS T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c = 25 C T A 2.5 b, c T = 70 C A 1.6 T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max.Unit b, d R t 10 s 38 50 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Foot (Drain) Steady State 20 25 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 65170 www.vishay.com S09-1814-Rev. A, 14-Sep-09 1New Product Si4712DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 1 mA Gate-Source Threshold Voltage 1.2 2.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.028 0.2 DS GS I Zero Gate Voltage Drain Current mA DSS V = 30 V, V = 0 V, T = 100 C 220 DS GS J a I V 5 V, V = 10 V 30 A On -State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0105 0.013 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.013 0.0165 GS D a g V = 15 V, I = 15 A 37 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1084 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 200 pF oss DS GS C Reverse Transfer Capacitance 77 rss V = 15 V, V = 10 V, I = 10 A 18.5 28 DS GS D Total Gate Charge Q g 8.3 12.5 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 2.8 gs DS GS D Q Gate-Drain Charge 2.0 gd R Gate Resistance f = 1 MHz 0.3 1.2 2.4 g t Turn-On Delay Time 16 30 d(on) t Rise Time V = 15 V, R = 1.5 18 35 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 816 d(on) Rise Time t 11 22 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 17 34 d(off) Fall Time t 918 f Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current I T = 25 C 4.5 S C A a I 50 Pulse Diode Forward Current SM V I = 1 A Body Diode Voltage 0.48 0.65 V SD S Body Diode Reverse Recovery Time t 17 34 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65170 2 S09-1814-Rev. A, 14-Sep-09