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R = 150 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 75 nC ) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 165 pF ) oss(eff.) is tailored to minimize conduction loss, provide superior switch- 100% Avalanche Tested ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD Applications TV power, ATX power and industrial power applications. Solar Inverter AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FCA20N60 / Symbol Parameter Unit FCA20N60 F109 V Drain to Source Voltage 600 V DSS V Gate-Soure voltage 30 V GSS o - Continuous (T = 25 C) 20 C I Drain Current A D o - Continuous (T = 100 C) 12.5 C I Drain Current - Pulsed (Note 1) 60 A DM E Single Pulsed Avalanche Energy (Note 2) 690 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 208 W C P Power Dissipation D o o - Derate Above 25C1.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics FCA20N60 / Symbol Parameter Unit FCA20N60 F109 R Thermal Resistance, Junction to Case, Max. 0.6 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 41.7 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCA20N60 Rev. C0