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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCA35N60 N-Channel SuperFET MOSFET May 2014 FCA35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 m Features Description SuperFET MOSFET is Fairchild Semiconductors first genera- 650V T = 150C J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 79 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 139 nC ) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 340 pF ) oss(eff.) is tailored to minimize conduction loss, provide superior switch- 100% Avalanche Tested ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD Applications TV power, ATX power and industrial power applications. Solar Inverter AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCA35N60 Unit V Drain to Source Voltage 600 V DSS V Gate-Soure voltage 30 V GSS o - Continuous (T = 25 C) 35 C I Drain Current A D o - Continuous (T = 100 C) 22.2 C I Drain Current - Pulsed (Note 1) 105 A DM E Single Pulsed Avalanche Energy (Note 2) 1455 mJ AS I Avalanche Current (Note 1) 35 A AR E Repetitive Avalanche Energy (Note 1) 31.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 312.5 W C P Power Dissipation D o o - Derate Above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds C T 300 L Thermal Characteristics Symbol Parameter FCA35N60 Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 42 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCA35N60 Rev. C2