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R = 530 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 23 nC) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 60 pF) is tailored to minimize conduction loss, provide superior switch- oss(eff.) ing performance, dv/dt rate and higher avalanche energy. Con- 100% Avalanche Tested sequently, SuperFET MOSFET is very suitable for the switching RoHS Compliant power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application LCD / LED TV and Monitor Lighting Solar Inverter AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FCD7N60TM / Symbol Parameter Unit FCD7N60TM WS V Drain to Source Voltage 600 V DSS o - Continuous (T = 25 C) 7 C I Drain Current A D o - Continuous (T = 100 C) 4.4 C I Drain Current - Pulsed (Note 1) 21 A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 230 mJ AS I Avalanche Current (Note 1) 7A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 83 W C P Power Dissipation D o o - Derate Above 25C0.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics FCD7N60TM / Symbol Parameter Unit FCD7N60TM WS R Thermal Resistance, Junction to Case, Max. 1.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 83 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCD7N60 Rev. C1