X-On Electronics has gained recognition as a prominent supplier of FCH150N65F_F155 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH150N65F_F155 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH150N65F_F155 ON Semiconductor

Hot FCH150N65F_F155 electronic component of ON Semiconductor
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Part No.FCH150N65F_F155
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET
Datasheet: FCH150N65F_F155 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.985 ea
Line Total: USD 6.98 
Availability - 385
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 4.1836
10 : USD 4.0922
30 : USD 4.0302
100 : USD 3.9679

385
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 6.985
10 : USD 5.852
25 : USD 4.532
100 : USD 3.883
450 : USD 3.872

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Forward Transconductance - Min
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We are delighted to provide the FCH150N65F_F155 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH150N65F_F155 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPERFET II, FRFET 650 V, 24 A, 150 m FCH150N65F Description SUPERFET II MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 650 V 150 m 10 V 24 A and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFETs optimized D body diode reverse recovery performance can remove additional component and improve system reliability. Features G 700 V T = 150C J Typ. R = 133 m DS(on)) Ultra Low Gate Charge (Typ. Q = 72 nC) g S Low Effective Output Capacitance (Typ. C = 361 pF) oss(eff.) 100% Avalanche Tested S This Device is PbFree and is RoHS Compliant D GG Applications LCD, LED, PDP TV Solar Inverter Telecom, Server Power Supplies TO2473LD ACDC Power Supply CASE 340CH MARKING DIAGRAM Y&Z&3&K FCH 150N65F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH150N65F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2021 Rev. 4 FCH150N65F/DFCH150N65F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH150N65FF155 Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 24 A D C Continuous (T = 100C) 14.9 C I Drain Current Pulsed (Note 1) 72 A DM E Single Pulsed Avalanche Energy (Note 2) 663 mJ AS I Avalanche Current (Note 1) 4.7 A AR E Repetitive Avalanche Energy (Note 1) 2.98 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 298 W D C Derate Above 25C 2.38 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 4.7 A, R = 25 , Starting T = 25C AS G J 3. I 12 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH150N65FF155 FCH150N65F TO2473LD Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH150N65FF155 Unit R Thermal Resistance, Junction to Case, Max. 0.42 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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