MOSFET N-Channel, SUPREMOS 600 V, 22 A, 165 m FCH22N60N Description The SUPREMOS MOSFET is ON Semiconductors next www.onsemi.com generation of high voltage superjunction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise V R MAX I MAX DS DS(ON) D process control provides lowest Rsp onresistance, superior switching 600 V 165 m 10 V 22 A performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, D and industrial power applications. Features 650 V T = 150C J G R = 140 m (Typ.) V = 10 V, I = 11 A DS(on) GS D Ultra Low Gate Charge (Typ. Q = 45 nC) g Low Effective Output Capacitance (Typ. C = 196.4 pF) oss(eff.) S 100% Avalanche Tested N-CHANNEL MOSFET This Device is PbFree and is RoHS Compliant Applications PDP TV Solar Inverter G D S ACDC Power Supply TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 22N60N Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH22N60N = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2020 Rev. 3 FCH22N60N/DFCH22N60N ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH22N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS I Drain Current A Continuous (T = 25C) 22 D C Continuous (T = 100C) 13.8 C I Drain Current Pulsed (Note 1) 66 A DM E Single Pulsed Avalanche Energy (Note 2) 672 mJ AS I Avalanche Current (Note 1) 7.3 A AR E Repetitive Avalanche Energy (Note 1) 2.75 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 205 W D C Derate above 25C 1.64 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 7.3 A, R = 25 , starting T = 25 C AS G J 3. I 22 A, di/dt 200 A/s, V 380 V, starting T = 25 C SD DD J THERMAL CHARACTERISTICS Symbol Parameter FCH22N60N Unit R Thermal Resistance, Junction to Case, Max. 0.61 C/W JC Thermal Resistance, Junction to Ambient, Max. 40 R JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH22N60N FCH22N60N TO2473LD Tube N/A N/A 30 Units www.onsemi.com 2