X-On Electronics has gained recognition as a prominent supplier of FCH25N60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH25N60N MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH25N60N ON Semiconductor

FCH25N60N electronic component of ON Semiconductor
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See Product Specifications
Part No.FCH25N60N
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 600V N-Channel MOSFET SupreMOS
Datasheet: FCH25N60N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.237 ea
Line Total: USD 6.24 
Availability - 16
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 6.237
10 : USD 5.302
25 : USD 4.829
100 : USD 4.29
250 : USD 4.114
450 : USD 3.883
900 : USD 3.542
2700 : USD 3.542
5400 : USD 3.432

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
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Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCH25N60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH25N60N and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPREMOS 600 V, 25 A, 126 m FCH25N60N Description The SUPREMOS MOSFET is ON Semiconductors next www.onsemi.com generation of high voltage superjunction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise V R MAX I MAX DS DS(ON) D process control provides lowest Rsp onresistance, superior switching 600 V 126 m 10 V 25 A performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial D power applications. Features R = 108 m (Typ.) V = 10 V, I = 12.5 A DS(on) GS D G Ultra Low Gate Charge (Typ. Q = 57 nC) g Low Effective Output Capacitance (Typ. C = 262 pF) oss(eff.) 100% Avalanche Tested S This Device is PbFree and is RoHS Compliant N-CHANNEL MOSFET Applications Solar Inverter ACDC Power Supply G D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 25N60N Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH25N60N = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2020 Rev. 3 FCH25N60N/DFCH25N60N ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS I Drain Current A Continuous (T = 25C) 25 D C Continuous (T = 100C) 16 C I Drain Current Pulsed (Note 1) 75 A DM E Single Pulsed Avalanche Energy (Note 2) 861 mJ AS I Avalanche Current (Note 1) 8.3 A AR E Repetitive Avalanche Energy (Note 1) 2.2 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 216 W D C Derate above 25C 1.72 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 8.3 A, R = 25 , starting T = 25 C AS G J 3. I 25 A, di/dt 200 A/s, V 380 V, starting T = 25 C SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH25N60N FCH25N60N TO2473LD Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.58 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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