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FCP099N60E N-Channel SuperFET II Easy-Drive MOSFET June 2016 FCP099N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 37 A, 99 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 87 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 88nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 309 pF) oss(eff.) to minimize conduction loss, provide superior switching perfor- 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. Consequently, RoHS Compliant SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET Applications series. Noted by the part number suffix, this family helps manage EMI issues and allows for easier design implementa- Telecom / Sever Power Supplies tion. For faster switching in applications where switching losses Industrial Power Supplies must be at an absolute minimum, please consider the Super- FET II MOSFET series. D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP099N60E Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 37 C I Drain Current A D o - Continuous (T = 100 C) 24 C I Drain Current - Pulsed (Note 1) 111 A DM E Single Pulsed Avalanche Energy (Note 2) 809 mJ AS I Avalanche Current (Note 1) 6.8 A AR E Repetitive Avalanche Energy (Note 1) 3.57 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 357 W C P Power Dissipation D o o - Derate Above 25C2.85W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCP099N60E Unit R Thermal Resistance, Junction to Case, Max. 0.35 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 1 www.fairchildsemi.com 2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1