MOSFET N-Channel, SUPREMOS 600 V, 47 A, 62 m FCH47N60N Description www.onsemi.com The SUPREMOS MOSFET is ON Semiconductors next generation of high voltage superjunction (SJ) technology employing a deep trench filling process that differentiates it from the V R MAX I MAX conventional SJ MOSFETs. This advanced technology and precise DS DS(ON) D process control provides lowest Rsp onresistance, superior switching 600 V 62 m 10 V 47 A performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, D server/telecom power, FPD TV power, ATX power, and industrial power applications. Features 650 V T = 150C J G R = 51.5 m (Typ.) V = 10 V, I = 23.5 A DS(on) GS D Ultra Low Gate Charge (Typ. Q = 115 nC) g Low Effective Output Capacitance (Typ. C = 511 pF) S oss(eff.) 100% Avalanche Tested N-CHANNEL MOSFET This Device is PbFree and is RoHS Compliant Applications Solar Inverter G ACDC Power Supply D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 47N60N Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH47N60N = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: April, 2021 Rev. 3 FCH47N60N/DFCH47N60N ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS I Drain Current A Continuous (T = 25C) 47 D C Continuous (T = 100C) 29.7 C I Drain Current Pulsed (Note 1) 141 A DM E Single Pulsed Avalanche Energy (Note 2) 3068 mJ AS I Avalanche Current (Note 1) 15.7 A AR E Repetitive Avalanche Energy (Note 1) 3.7 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 368 W D C Derate above 25C 2.94 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 15.7 A, R = 25 , starting T = 25 C AS G J 3. I 47 A, di/dt 200 A/ s, V 380 V, starting T = 25 C SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH47N60N FCH47N60N TO2473LD Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.34 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2