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FCP170N60 N-Channel SuperFET II MOSFET September 2014 FCP170N60 N-Channel SuperFET II MOSFET 600 V, 22 A, 170 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 150 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 42 nC) and lower gate charge performance. This advanced technology g is tailored to minimize conduction loss, provide superior Low Effective Output Capacitance (Typ. C = 190 pF) oss(eff.) switching performance, and withstand extreme dv/dt rate and 100% Avalanche Tested higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system RoHS Compliant miniaturization and higher efficiency. Applications Telecom / Sever Power Supplies Industrial Power Supplies AC-DC Power Supply D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP170N60 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC 30 o - Continuous (T = 25 C) 22 C I Drain Current A D o - Continuous (T = 100 C) 14 C I Drain Current - Pulsed (Note 1) 66 A DM E Single Pulsed Avalanche Energy (Note 2) 525 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 2.27 mJ AR MOSFET dv/dt (Note 3) 100 dv/dt V/ns Peak Diode Recovery dv/dt 20 o (T = 25 C) 227 W C P Power Dissipation D o o - Derate above 25C1.82W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCP170N60 Unit R Thermal Resistance, Junction to Case, Max. 0.55 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 1 www.fairchildsemi.com 2014 Fairchild Semiconductor Corporation FCP170N60 Rev. C1