The FCP9N60N is an Enhanced Fast Switching N-Channel Power MOSFET from ON Semiconductor. It is designed to minimize the additional conduction losses, switching losses, and gate driving losses associated with switching applications. The device features an enhanced body diode, which helps reduce the conduction losses during the off-state periods. It can be used in a variety of applications such as switch-mode power supplies, Uninterruptible Power Supplies, motor control circuits, and high-frequency switching applications. The FCP9N60N also features a wide range of ratings including, a voltage rating of 600V, a continuous drain current of 8.4A, and a maximum pulse drain current of 10A.