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V = 10 V, I = 4.5 A The SupreMOS MOSFET is Fairchild Semiconductors next DS(on) GS D generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Q = 22 nC) g employing a deep trench filling process that differentiates it from Low Effective Output Capacitance (Typ. C = 106 pF) oss(eff.) the conventional SJ MOSFETs. This advanced technology and 100% Avalanche Tested precise process control provides lowest Rsp on-resistance, RoHS Compliant superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- Application verter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. LCD/LED/PDP TV Lighting Solar Inverter AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP9N60N FCPF9N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 9.0 9.0* C I Drain Current A D o - Continuous (T = 100 C) 5.7 5.7* C I Drain Current - Pulsed (Note 1) 27 27* A DM E Single Pulsed Avalanche Energy (Note 2) 135 mJ AS I Avalanche Current (Note 1) 3 A AR E Repetitive Avalanche Energy (Note 1) 0.83 mJ AR MOSFET dv/dt 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 83.3 29.8 W C P Power Dissipation D o o - Derate Above 25 C 0.67 0.24 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP9N60N FCPF9N60NT Unit R Thermal Resistance, Junction to Case, Max. 1.5 4.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP9N60N / FCPF9N60NT Rev. C1