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V = 10 V, I = 80 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) Applications High Power and Current Handling Capability Synchronous Rectification for ATX / Server / Telecom PSU RoHS Compliant Battery Protection Circuit Motor drives and Uninterruptible Power Supplies D (Pin4, tab) 1. Gate 4 2. Source 3. Source 4. Drain 5. Source 6. Source G 1 7. Source 2 3 (Pin1) 5 D2-PAK 6 7 (TO-263) S (Pin2,3,5,6,7) o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB024N04AL7 Unit V Drain to Source Voltage 40 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C, Silicon Limited) 219* C o I Drain Current - Continuous (T = 100 C, Silicon Limited) 155* A D C o - Continuous (T = 25 C, Package Limited) 100 C I Drain Current - Pulsed (Note 1) 876 A DM E Single Pulsed Avalanche Energy (Note 2) 864 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 214 W C P Power Dissipation D o o 1.43W/ C - Derate Above 25C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100 A. Thermal Characteristics Symbol Parameter FDB024N04AL7 Unit R Thermal Resistance, Junction to Case, Max. 0.7 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB024N04AL7 Rev. C1