X-On Electronics has gained recognition as a prominent supplier of FDB035AN06A0_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB035AN06A0_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB035AN06A0_F085 ON Semiconductor

FDB035AN06A0_F085 electronic component of ON Semiconductor
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Part No.FDB035AN06A0_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Chan PowerTrench MOSFET
Datasheet: FDB035AN06A0_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.234
10 : USD 3.1752
25 : USD 3.0024
100 : USD 2.6568
500 : USD 2.3976
800 : USD 2.1924
2400 : USD 2.1276
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the FDB035AN06A0_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB035AN06A0_F085 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDB035AN06A0-F085 FDB035AN06A0-F085 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m Applications Features Motor / Body Load Control r = 3.2m (Typ.), V = 10V, I = 80A ABS Systems DS(ON) GS D Q (tot) = 95nC (Typ.), V = 10V Powertrain Management g GS Low Miller Charge Injection Systems Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse and Repetitive Pulse) Distributed Power Architectures and VRMs Qualified to AEC Q101 Primary Switch for 12V and 24V systems Formerly developmental type 82584 D GATE G DRAIN SOURCE (FLANGE) S TO-263AB FDB SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current o 80 A Continuous (T < 153 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 22 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 625 mJ AS Power dissipation 310 W P D o o Derate above 25C2.07W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 0.48 C/W JC o R Thermal Resistance Junction to Ambient TO-263, (Note 2) 62 C/W JA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W JA Publication Order Number: 2012 Semiconductor Components Industries, LLC. FDB035AN06A0-F085/D August-2017 Rev. 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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