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FDB42AN15A0 F085 N-Channel Power Trench MOSFET June 2013 FDB42AN15A0 F085 N-Channel Power Trench MOSFET 150V, 35A, 42m D D Features Typ r = 30m at V = 10V, I = 12A DS(on) GS D Typ Q = 78nC at V = 10V, I = 12A g(tot) GS D G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S Applications FDB SERIES Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage 20 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 35 GS C I A D Pulsed Drain Current T = 25C See Figure4 C E Single Pulse Avalanche Energy (Note 2) 78 mJ AS Power Dissipation 150 W P D o o Derate above 25C1.0W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance Junction to Case 1.0 C/W JC o R Maximum Thermal Resistance Junction to Ambient (Note 3) 43 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB42AN15A0 FDB42AN15A0 F085 D2-PAK(TO-263) 330mm 24mm 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting T = 25C, L = 0.2mH, I = 28A, V = 100V during inductor charging and V = 0V during time in avalanche J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the user s board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB42AN15A0 F085 Rev. C1