FDP6030L/FDB6030L August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V R = 13 m V = 10 V DS(ON) GS designed specifically to improve the overall efficiency of R = 17 m V = 4.5 V DS(ON) GS DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electrical parameters specified at These MOSFETs feature faster switching and lower elevated temperature gate charge than other MOSFETs with comparable R specifications. DS(ON) High performance trench technology for extremely low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 175C maximum junction temperature rating It has been optimized for low gate charge, low R DS(ON) and fast switching speed. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 48 A D Pulsed 150 P D Total Power Dissipation T = 25C 52 W C 0.3 Derate above 25C W/C T , T Operating and Storage Junction Temperature Range 65 to +175 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.9 JC C/W R JA Thermal Resistance, Junction-to-Ambient 62.5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6030L FDB6030L 13 24mm 800 units FDP6030L FDP6030L Tube n/a 45 2003 Fairchild Semiconductor Corporation FDP6030L/FDB6030L Rev E(W)FDP6030L/FDB6030L Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) E Single Pulse Drain-Source V = 15 V, I = 26 A 100 mJ AS DD D Avalanche Energy I Maximum Drain-Source Avalanche 26 A AS Current Off Characteristics BV DrainSource Breakdown Voltage 30 V DSS VGS = 0 V, ID = 250 A BVDSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C mV/C D 23 Coefficient T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 DSS DS GS A I GateBody Leakage V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.9 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 250 A, Referenced to 25C mV/C D 5 Temperature Coefficient T J R Static DrainSource On V = 10 V, I = 26 A DS(on) GS D 7.9 13 Resistance V = 4.5 V, I = 21 A GS D 10.2 17 m V = 10 V, I = 26 A, T =125C 13.0 20 GS D J I OnState Drain Current V = 10 V, V = 10 V 60 A D(on) GS DS g Forward Transconductance V = 10V, I = 26 A 68 S FS DS D Dynamic Characteristics C Input Capacitance 1250 pF iss V = 15 V, V = 0 V, DS GS f = 1.0 MHz C Output Capacitance 330 pF oss C Reverse Transfer Capacitance 155 pF rss R Gate Resistance V = 15 mV, f = 1.0 MHz 1.3 G GS Switching Characteristics (Note 2) t TurnOn Delay Time V = 15V, I = 1 A, 11 20 ns d(on) DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 12 22 ns r t TurnOff Delay Time 29 46 ns d(off) t TurnOff Fall Time 12 21 ns f V = 15 V, I = 26 A, Q Total Gate Charge DS D 13 18 nC g V = 5 V GS Q GateSource Charge 3.9 nC gs Q GateDrain Charge 5.2 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 48 A S DrainSource Diode Forward V V = 0 V, I = 26 A (Note 1) 0.92 1.3 V SD GS S Voltage t Diode Reverse Recovery Time I = 26 A, 26 nS rr F d /d = 100 A/s iF t Q Diode Reverse Recovery Charge 15 nC rr Notes: 1. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDP6030L/FDB6030L Rev E(W)