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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDP7030BL/FDB7030BL October 2003 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 60 A, 30 V R = 9 m V = 10 V DS(ON) GS designed specifically to improve the overall efficiency of R = 12 m V = 4.5 V DS(ON) GS DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electrical parameters specified at These MOSFETs feature faster switching and lower elevated temperature gate charge than other MOSFETs with comparable R specifications. DS(ON) High performance trench technology for extremely low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 175C maximum junction temperature rating It has been optimized for low gate charge, low R DS(ON) and fast switching speed. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 60 A D Pulsed (Note 1) 180 P D Total Power Dissipation T = 25C 60 W C 0.4 Derate above 25C W/C T , T Operating and Storage Junction Temperature Range 65 to +175 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.5 JC C/W R JA Thermal Resistance, Junction-to-Ambient 62.5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BL FDB7030BL 13 24mm 800 units FDP7030BL FDP7030BL Tube n/a 45 2003 Fairchild Semiconductor Corporation FDP7030BL/FDB7030BL Rev D1(W)