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FDB86102LZ N-Channel PowerTrench MOSFET May 2011 FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 m Features General Description Max r = 24 m at V = 10 V, I = 8.3 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Max r = 35 m at V = 4.5 V, I = 6.8 A DS(on) GS D been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD HBM ESD protection level > 6 kV typical (Note 4) voltage level. Very low Qg and Qgd compared to competing trench Applications technologies DC-DC conversion Fast switching speed Inverter 100% UIL Tested Synchronous Rectifier RoHS Compliant D D G G S TO-263AB FDB Series S MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous(Package limited) TC = 25 C 30 -Continuous (Silicon limited) TC = 25 C 40 I A D -Continuous TA = 25 C (Note 1a) 8.3 -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25 C (Note 1a) 3.1 A P W D Power Dissipation T = 25 C (Note 1b) 2 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 1.9 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB86102LZ FDB86102LZ TO-263AB 330mm 24 mm 800 units 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB86102LZ Rev.C1