FDB86363_F085 N-Channel PowerTrench MOSFET
June 2014
FDB86363_F085
N-Channel PowerTrench MOSFET
D
D
80 V, 110 A, 2.4 m
Features
Typical R = 2.0 m at V = 10V, I = 80 A
DS(on) GS D
G
Typical Q = 131 nC at V = 10V, I = 80 A
g(tot) GS D
G
UIS Capability S
RoHS Compliant
TO-263
S
Qualified to AEC Q101
FDB SERIES
Applications
Forcurrentpackagedrawing,pleaserefertotheFairchild
Automotive Engine Control
websiteatwww.fairchildsemi.com/packaging
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings T = 25C unless otherwise noted.
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Symbol Parameter Ratings Units
V Drain-to-Source Voltage 80 V
DSS
V Gate-to-Source Voltage 20 V
GS
Drain Current - Continuous (V =10) (Note 1) T = 25C 110
GS C
I A
D
Pulsed Drain Current T = 25C See Figure 4
C
E Single Pulse Avalanche Energy (Note 2) 512 mJ
AS
Power Dissipation 300 W
P
D
o o
Derate Above 25C2.0W/ C
o
T , T Operating and Storage Temperature -55 to + 175 C
J STG
o
R Thermal Resistance, Junction to Case 0.5 C/W
JC
o
R Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W
JA
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25C, L = 0.25mH, I = 64A, V = 80V during inductor charging and V = 0V during time in avalanche.
J AS DD DD
3: R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
JA
mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating
JC JA
2
presented here is based on mounting on a 1 in pad of 2oz copper.
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB86363 FDB86363_F085 D2-PAK(TO-263) 330mm 24mm 800 units
2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDB86363_F085 Rev. C2
FDB86363_F085 N-Channel PowerTrench MOSFET
Electrical Characteristics T = 25C unless otherwise noted.
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Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
B Drain-to-Source Breakdown Voltage I = 250A, V = 0V 80 - - V
VDSS D GS
o
V = 80V, T = 25 C - - 1 A
DS J
I Drain-to-Source Leakage Current
DSS
o
V = 0V T = 175 C (Note 4) - - 1 mA
GS J
I Gate-to-Source Leakage Current V = 20V - - 100 nA
GSS GS
On Characteristics
V Gate to Source Threshold Voltage V = V , I = 250A 2.0 3.0 4.0 V
GS(th) GS DS D
o
T = 25 C - 2.0 2.4 m
I = 80A,
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D
R Drain to Source On Resistance
DS(on)
o
V = 10V
T = 175 C (Note 4) - 3.8 4.3 m
GS
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Dynamic Characteristics
C Input Capacitance - 10000 - pF
iss
V = 40V, V = 0V,
DS GS
C Output Capacitance - 1400 - pF
oss
f = 1MHz
C Reverse Transfer Capacitance - 95 - pF
rss
R Gate Resistance f = 1MHz - 3.3 -
g
Q Total Gate Charge at 10V V = 0 to 10V - 131 150 nC
g(ToT) GS
V = 64V
DD
Q Threshold Gate Charge V = 0 to 2V - 18 21 nC
I = 80A
g(th) GS
D
Q Gate-to-Source Gate Charge -47 - nC
gs
Q Gate-to-Drain Miller Charge - 24 - nC
gd
Switching Characteristics
t Turn-On Time - - 231 ns
on
t Turn-On Delay - 38 - ns
d(on)
t Rise Time - 129 - ns
V = 40V, I = 80A,
r
DD D
V = 10V, R = 6
t Turn-Off Delay - 64 - ns
GS GEN
d(off)
t Fall Time - 40 - ns
f
t Turn-Off Time - - 135 ns
off
Drain-Source Diode Characteristics
I =80A, V = 0V - - 1.25 V
SD GS
V Source-to-Drain Diode Voltage
SD
I = 40A, V = 0V - - 1.2 V
SD GS
t Reverse-Recovery Time - 88 101 ns
I = 80A, dI /dt = 100A/s,
rr
F SD
V =64V
Q Reverse-Recovery Charge - 129 157 nC
DD
rr
Note:
4: The maximum value is specified by design at T = 175C. Product is not tested to this condition in production.
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FDB86363_F085 Rev. C2 2 www.fairchildsemi.com