X-On Electronics has gained recognition as a prominent supplier of SCT50N120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT50N120 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT50N120 STMicroelectronics

SCT50N120 electronic component of STMicroelectronics
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Part No.SCT50N120
Manufacturer: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C)
Datasheet: SCT50N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 38.0272 ea
Line Total: USD 38.03 
Availability - 9
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 38.0272
30 : USD 36.1133

46
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 51.282
3 : USD 49.322

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
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We are delighted to provide the SCT50N120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT50N120 and other electronic components in the SiC MOSFETs category and beyond.

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The SCT50N120 with MOSFET Silicon Carbide Power MOSFET, 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) is a Silicon Carbide Power MOSFET designed and manufactured by STMicroelectronics. This device is rated for 1200 Volts, with a current capability of up to 65 Amps. It has a low on-resistance of 59 mOhms (typ. TJ = 150 C), and is housed in a HiP247 package for added thermal and electrical performance. This Power MOSFET is also designed for low on-state power losses through its fast switching capability, allowing high system efficiency. Furthermore, this product is optimized for excellent thermal behavior, allowing it to handle larger currents and voltages.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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