X-On Electronics has gained recognition as a prominent supplier of SD2931-12W rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. SD2931-12W rf mosfet transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

SD2931-12W STMicroelectronics

SD2931-12W electronic component of STMicroelectronics
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See Product Specifications
Part No.SD2931-12W
Manufacturer: STMicroelectronics
Category:RF MOSFET Transistors
Description: RF MOSFET TRANSISTORS RF PWR N-CH MOS 150W 14DB 175MHZ
Datasheet: SD2931-12W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 85.189 ea
Line Total: USD 4259.45

Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 50
Multiples : 1
50 : USD 85.189
500 : USD 83.369
5000 : USD 73.619
25000 : USD 69.784
50000 : USD 69.771

0 - WHS 2


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 2
Multiples : 1
2 : USD 92.0679

     
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We are delighted to provide the SD2931-12W from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SD2931-12W and other electronic components in the RF MOSFET Transistors category and beyond.

SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P = 150 W MIN. WITH 14 dB GAIN OUT 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS PIN CONNECTION field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 230 4 1 MHz. 3 2 1. Drain 3. Gate 2. Source 4. Source ORDER CODES Order Codes Marking Package Packaging SD2931 SD2931 M174 Plastic Tray ABSOLUTE MAXIMUM RATINGS (T = 25 C) CASE Symbol Parameter Value Unit V Drain Source Voltage 125 V (BR)DSS V Drain-Gate Voltage (R = 1M ) 125 V DGR GS V Gate-Source Volatge 20 V GS I Drain Current 20 A D P Power Dissipation 292 W DISS T Max. Operating Junction Temperature 200 C j T Storage Temperature -65 to +150 C STG THERMAL DATA R Junction -Case Thermal Resistance 0.6 C/W th(j-c) REV. 4 July 2004 1/10 Obsolete Product(s) - Obsolete Product(s)SD2931 ELECTRICAL SPECIFICATION (T = 25C) CASE STATIC Symbol Test Conditions Min. Typ. Max. Unit V V = 0 V I = 100 mA 125 V (BR)DSS GS DS I V = 0 V V = 50 V 50 A DSS GS DS I V = 20 V V = 0 V 250 nA GSS GS DS V V = 10 V I = 250 mA 1.5 4.0 V GS(Q)* DS D V V = 10 V I = 10 A 3.0 V DS(ON) GS D G V = 10 V I = 5 A 5mho FS DS D C V = 0 V V = 50 V f = 1 MHz 480 pF ISS GS DS C V = 0 V V = 50 V f = 1 MHz 190 pF OSS GS DS C V = 0 V V = 50 V f = 1 MHz 18 pF RSS GS DS * V sorted with alpha/numeric code marked on unit. GS(Q) DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P V = 50 V I = 250 mA f = 175 MHz 150 W OUT DD DQ G V = 50 V I = 250 mA P 150 W f = 175 MHz 14 15 dB PS DD DQ OUT = V = 50 V I = 250 mA P = 150 W f = 175 MHz 55 65 % D DD DQ OUT Load V = 50 V I = 250 mA P 150 W f = 175 MHz DD DQ OUT = 10:1 VSWR Mismatch All Phase Angles IMPEDANCE DATA V SORTS GS D AA 1.5 - 1.6 J 2.8 - 2.9 BB 1.6 - 1.7 K 2.9 - 3.0 CC 1.7 - 1.8 L 3.0 - 3.1 Z DL DD 1.8 - 1.9 M 3.1 - 3.2 Typical Input Typical Drain EE 1.9 - 2.0 N 3.2 - 3.3 Impedance Load Impedance A 2.0 - 2.1 P 3.3 - 3.4 B 2.1 - 2.2 Q 3.4 - 3.5 G Zin C 2.2 - 2.3 R 3.5 - 3.6 D 2.3 - 2.4 S 3.6 - 3.7 E 2.4 - 2.5 T 3.7 - 3.8 F 2.5 - 2.6 U 3.8 - 3.9 S G 2.6 - 2.7 V 3.9 - 4.0 H 2.7 - 2.8 Z ()Z ( ) FREQ IN DL 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 2/10 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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